Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

	Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon
其他题名	论文其他题名
	Liao Y. P.; Shao X. B.; Gao F. L.; Luo W. S.; Wu Y.; Fu G. Z.; Jing H.; Ma K.
	2006
发表期刊	Chinese Physics
ISSN	1009-1963
卷号	15 期号:6 页码:1310-1314
摘要	Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi2) assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26704
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liao Y. P.,Shao X. B.,Gao F. L.,et al. Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon[J]. Chinese Physics,2006,15(6):1310-1314.
APA	Liao Y. P..,Shao X. B..,Gao F. L..,Luo W. S..,Wu Y..,...&Ma K..(2006).Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon.Chinese Physics,15(6),1310-1314.
MLA	Liao Y. P.,et al."Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon".Chinese Physics 15.6(2006):1310-1314.

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