Electroluminescent properties of a device based on terbium-doped ZnS nanocrystals

	Electroluminescent properties of a device based on terbium-doped ZnS nanocrystals
其他题名	论文其他题名
	Niu J. H.; Hua R. N.; Li W. L.; Li M. T.; Yu T. Z.
	2006
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	39 期号:11 页码:2357-2360
摘要	Rare earth terbium (Tb)-doped zinc sulfide (ZnS) nanocrystals (NCs) sized between 3 and 4 nm were synthesized via a co-precipitation reaction of precursors, zinc acetate (Zn(CH3COO)(2)), terbium chloride (TbCl3 center dot 6H(2)O), lithium fluoride (LiF) and thiocarbamide in a methacrylic acid/citric acid/methanol mixing solution. The NCs were characterized by means of x-ray powder diffraction, a transmission electron microscope and a fluorescence spectrophotometer. Electroluminescent (EL) properties of the device having a hybrid organic/inorganic multilayer structure with ITO/(poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate (PEDOT-PSS)(70nm)/poly(vinylcobarzale)(PVK)(100nm)/ZnS:Tb NCs(120nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)(30nm)/LiF(1nm)/Al(100 nm) were studied. Injecting electrons and holes were recombined to form excitons which were confined within the ZnS: Tb NC host and then the exciton energy was transferred to the Tb3+ centre, and finally the green emission of the Tb3+ ion was observed. The four emissions which peaked at 430, 491, 546 and 577 nm were attributed to the electronic transitions of the ZnS host and the D-5(4)-F-7(6), D-5(4)-F-7(5) and D-5(4)-F-7(4) of the Tb3+ centre, respectively, when the EL device was driven at 10V. The maximum luminance of the ZnS: Tb NCs-based device is about 15 cd m(-2) at 25V driving voltage.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26702
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Niu J. H.,Hua R. N.,Li W. L.,et al. Electroluminescent properties of a device based on terbium-doped ZnS nanocrystals[J]. Journal of Physics D-Applied Physics,2006,39(11):2357-2360.
APA	Niu J. H.,Hua R. N.,Li W. L.,Li M. T.,&Yu T. Z..(2006).Electroluminescent properties of a device based on terbium-doped ZnS nanocrystals.Journal of Physics D-Applied Physics,39(11),2357-2360.
MLA	Niu J. H.,et al."Electroluminescent properties of a device based on terbium-doped ZnS nanocrystals".Journal of Physics D-Applied Physics 39.11(2006):2357-2360.

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