The present investigation introduces convex corners undercutting and results of rhombus compensation patterns in 40% aqueous KOH solution and in KOH saturated with isopropanol (IPA) solution. All experiments are carried out on (110) silicon at 70 degrees C. Undercuts take place on convex corners in both solutions. Moreover, the front etch planes governing undercut vary with solutions. Rhombus compensations are used to correct the undercut. Perfect acute corner without residue is obtained, and there are only some residue structures on both sides of obtuse convex corners in KOH with IPA solution, which are better results than those in pure aqueous KOH solution. (c) 2006 Elsevier Ltd. All rights reserved.
Jia C. P.,Dong W.,Liu C. X.,et al. Convex corners undercutting and rhombus compensation in KOH with and without IPA solution on (110) silicon[J]. Microelectronics Journal,2006,37(11):1297-1301.
APA
Jia C. P..,Dong W..,Liu C. X..,Zhang X. D..,Zhou J. R..,...&Chen W. Y..(2006).Convex corners undercutting and rhombus compensation in KOH with and without IPA solution on (110) silicon.Microelectronics Journal,37(11),1297-1301.
MLA
Jia C. P.,et al."Convex corners undercutting and rhombus compensation in KOH with and without IPA solution on (110) silicon".Microelectronics Journal 37.11(2006):1297-1301.
修改评论