Induced growth of high quality ZnO thin films by crystallized amorphous ZnO

	Induced growth of high quality ZnO thin films by crystallized amorphous ZnO
其他题名	论文其他题名
	Wang Z. J.; Song L. J.; Li S. C.; Lu Y. M.; Tian Y. X.; Liu J. Y.; Wang L. Y.
	2006
发表期刊	Chinese Physics
ISSN	1009-1963
卷号	15 期号:11 页码:2710-2712
摘要	This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80 degrees C. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26683
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang Z. J.,Song L. J.,Li S. C.,et al. Induced growth of high quality ZnO thin films by crystallized amorphous ZnO[J]. Chinese Physics,2006,15(11):2710-2712.
APA	Wang Z. J..,Song L. J..,Li S. C..,Lu Y. M..,Tian Y. X..,...&Wang L. Y..(2006).Induced growth of high quality ZnO thin films by crystallized amorphous ZnO.Chinese Physics,15(11),2710-2712.
MLA	Wang Z. J.,et al."Induced growth of high quality ZnO thin films by crystallized amorphous ZnO".Chinese Physics 15.11(2006):2710-2712.

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