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Optical properties of p-type ZnO doped by lithium and nitrogen
其他题名论文其他题名
Wang X. H.; Yao B.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Wei Z. P.; Lu Y. M.; Zhao D. X.; Zhang J. Y.; Fan X. W.; Guan L. X.; Cong C. X.
2007
发表期刊Solid State Communications
ISSN0038-1098
卷号141期号:11页码:600-604
摘要A lithium and nitrogen doped p-type ZnO (denoted as ZnO: (Li, N)) film was prepared by RF-magnetron sputtering and post annealing techniques with c-Al2O3 as substrate. Its transmittance was measured to be above 95%. Three dominant emission bands were observed at 3.311, 3.219 and 3.346 eV, respectively, in the 80 K photoluminescence (PL) spectrum of the p-type ZnO:(Li, N), and are attributed to radiative electron transition from conduction band to a Li-Zn-N complex acceptor level (eFA), radiative recombination of a donor-acceptor pair and recombination of the Li-Zn-N complex acceptor bound exciton, respectively, based on temperature-dependent and excitation intensity-dependent PL measurement results. The Li-Zn-N complex acceptor level was estimated to be about 126 meV above the valence band by fitting the eFA data obtained in the temperature-dependent PL spectra. (C) 2007 Elsevier Ltd. All rights reserved.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26655
专题中科院长春光机所知识产出
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Wang X. H.,Yao B.,Shen D. Z.,et al. Optical properties of p-type ZnO doped by lithium and nitrogen[J]. Solid State Communications,2007,141(11):600-604.
APA Wang X. H..,Yao B..,Shen D. Z..,Zhang Z. Z..,Li B. H..,...&Cong C. X..(2007).Optical properties of p-type ZnO doped by lithium and nitrogen.Solid State Communications,141(11),600-604.
MLA Wang X. H.,et al."Optical properties of p-type ZnO doped by lithium and nitrogen".Solid State Communications 141.11(2007):600-604.
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