Growth and photoluminescence for undoped and N-doped ZnO grown on 6H-SiC substrate

	Growth and photoluminescence for undoped and N-doped ZnO grown on 6H-SiC substrate
其他题名	论文其他题名
	Wang X.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Yao B.; Zhang J. Y.; Zhao D. X.; Fan X. W.
	2007
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	122 页码:165-167
摘要	Growth and photoluminescence (PL) spectra of undoped and N-doped ZnO grown on 6H-SiC substrate by plasma-assisted molecular beam epitaxy (P-MBE) method were especially studied. Compared with PL spectrum of undoped ZnO, a broadening of near-band-edge (NBE) emission was observed in N-doped samples at room temperature. The low-temperature (5 K) PL spectrum confirmed that some acceptor levels associated with N doping were presented in the N-doped ZnO sample. The NBE emission of undoped and N-doped ZnO samples grown on 6H-SiC showed a small blue-shift compared with that grown on Al2O3, it was relate to the change of band gap caused by stress. The intensity of dominant NBE emission from ZnO films grown on 6H-SiC is stronger and the FWHM is smaller than that grown on Al2O3 substrate. The deep-level emission can be observed on both samples, but the intensity ratio of NBE to deep-level emission is larger for ZnO samples grown on 6H-SiC. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26613
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X.,Lu Y. M.,Shen D. Z.,et al. Growth and photoluminescence for undoped and N-doped ZnO grown on 6H-SiC substrate[J]. Journal of Luminescence,2007,122:165-167.
APA	Wang X..,Lu Y. M..,Shen D. Z..,Zhang Z. Z..,Li B. H..,...&Fan X. W..(2007).Growth and photoluminescence for undoped and N-doped ZnO grown on 6H-SiC substrate.Journal of Luminescence,122,165-167.
MLA	Wang X.,et al."Growth and photoluminescence for undoped and N-doped ZnO grown on 6H-SiC substrate".Journal of Luminescence 122(2007):165-167.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Wang-2007-Growth and（182KB）			开放获取	--	浏览下载