Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film

	Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film
其他题名	论文其他题名
	Liu K. W.; Ma J. G.; Zhang J. Y.; Lu Y. M.; Jiang D. Y.; Li B. H.; Zhao D. X.; Zhang Z. Z.; Yao B.; Shen D. Z.
	2007
发表期刊	Solid-State Electronics
ISSN	0038-1101
卷号	51 期号:5 页码:757-761
摘要	In this study, metal-semiconductor-metal (NISM) photoconductive detector was fabricated on c-axis preferred oriented ZnO film prepared on quartz by radio frequency magnetron sputtering. With the applied bias below 3 V, the dark current was below 250 nA. The typical responsivity peaked at around 360 nm, and had values of 30 A/W. In addition, the UV (360 nm) to visible (450 nm) rejection ratio of around five orders could be extracted from the spectra response. Furthermore, the transient response measurement revealed fast photoresponse with a rise time of 20 ns. (c) 2007 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26604
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu K. W.,Ma J. G.,Zhang J. Y.,et al. Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film[J]. Solid-State Electronics,2007,51(5):757-761.
APA	Liu K. W..,Ma J. G..,Zhang J. Y..,Lu Y. M..,Jiang D. Y..,...&Shen D. Z..(2007).Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film.Solid-State Electronics,51(5),757-761.
MLA	Liu K. W.,et al."Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film".Solid-State Electronics 51.5(2007):757-761.

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