Low threshold, diode end-pumped Nd3+: GdVO4 self-Raman laser

	Low threshold, diode end-pumped Nd3+: GdVO4 self-Raman laser
其他题名	论文其他题名
	Baoshan W.; Huiming T.; Jiying P.; Jieguang M.; Lanlan G.
	2007
发表期刊	Optical Materials
ISSN	0925-3467
卷号	29 期号:12 页码:1817-1820
摘要	Low threshold, high efficient Raman laser output has been realized from a compact, diode end-pumped, self-stimulating Nd3+:GdVO4 Raman laser. Maximum Raman output power of 100 mW was achieved at a pulse repetition frequency (PRF) of 10 kHz with 1.8 W pump power. The optical efficiency is 5.6% from diode to Raman laser and the slope efficiency is 8%. The lowest threshold for the SRS process is only 400 mW at a PRF of 5 kHz. By generating second harmonics using a LBO crystal, 3 mW 588 nm yellow laser was also produced. A strong blue emission was observed in the Nd3+ :GdVO4 crystal when the Raman laser output, we contribute this for the upconversion of the Nd3+ in the crystal. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26597
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Baoshan W.,Huiming T.,Jiying P.,et al. Low threshold, diode end-pumped Nd3+: GdVO4 self-Raman laser[J]. Optical Materials,2007,29(12):1817-1820.
APA	Baoshan W.,Huiming T.,Jiying P.,Jieguang M.,&Lanlan G..(2007).Low threshold, diode end-pumped Nd3+: GdVO4 self-Raman laser.Optical Materials,29(12),1817-1820.
MLA	Baoshan W.,et al."Low threshold, diode end-pumped Nd3+: GdVO4 self-Raman laser".Optical Materials 29.12(2007):1817-1820.

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