Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy | |
其他题名 | 论文其他题名 |
Jiao S.; Lu Y. M.; Zhang Z. Z.; Li B. H.; Yao B.; Zhang J. Y.; Zhao D. X.; Shen D. Z.; Fan X. | |
2007 | |
发表期刊 | Journal of Applied Physics |
ISSN | 0021-8979 |
卷号 | 102期号:11 |
摘要 | Nitrogen-doped ZnO thin films with different nitrogen concentrations were fabricated by plasma-assisted molecular beam epitaxy. Hall effect measurements show p-type conduction for samples with low doping concentration. In highly doped ZnO, the p-type conduction converted to high resistance or unstable p-type behavior. This result indicates that highly doped samples are heavily compensated. In the low temperature photoluminescence spectrum, a donor-acceptor pair (DAP) emission band shows a strong redshift and broadening with increasing nitrogen doping concentration. The large shift of the DAP emission is explained by the Coulomb-potential fluctuation model related to compensated semiconductors. (c) 2007 American Institute of Physics. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26592 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Jiao S.,Lu Y. M.,Zhang Z. Z.,et al. Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy[J]. Journal of Applied Physics,2007,102(11). |
APA | Jiao S..,Lu Y. M..,Zhang Z. Z..,Li B. H..,Yao B..,...&Fan X..(2007).Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy.Journal of Applied Physics,102(11). |
MLA | Jiao S.,et al."Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy".Journal of Applied Physics 102.11(2007). |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Jiao-2007-Optical an(415KB) | 开放获取 | -- | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论