Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy

	Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy
其他题名	论文其他题名
	Zhang Z. Z.; Shen D. Z.; Lu Y. M.; Zhang J. Y.; Li B. H.; Zhao D. X.; Yao B.; Fan X. W.
	2007
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	122 页码:202-204
摘要	Optical properties of ZnO thin films fabricated on GaAs substrate by molecular beam epitaxy method were investigated. The emissions from acceptor-bound exciton and free electron acceptor were enhanced after annealing at 550 degrees C for I h. In the photoluminescence spectra of the annealed sample, donor-acceptor pair emission was confirmed by changing excitation density. Hall measurement indicated that the conductivity of the ZnO thin film converses from n-type to high resistant after thermal diffusion by annealing at 550 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26587
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang Z. Z.,Shen D. Z.,Lu Y. M.,et al. Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy[J]. Journal of Luminescence,2007,122:202-204.
APA	Zhang Z. Z..,Shen D. Z..,Lu Y. M..,Zhang J. Y..,Li B. H..,...&Fan X. W..(2007).Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy.Journal of Luminescence,122,202-204.
MLA	Zhang Z. Z.,et al."Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy".Journal of Luminescence 122(2007):202-204.

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