High-power InGaAs VCSEL's single devices and 2-D arrays

	High-power InGaAs VCSEL's single devices and 2-D arrays
其他题名	论文其他题名
	Li T.; Ning Y. Q.; Sun Y. F.; Wang C.; Liu J.; Liu Y.; Wang L. J.
	2007
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	122 页码:571-573
摘要	Single devices and 2-D arrays of bottom-emitting vertical-cavity surface-emitting lasers operating in the 980nm wavelength regime, have been fabricated for high continuous-wave optical output power. Single devices with active diameters of 500 Pin show high output powers of 1.95 W at room temperature. Its threshold current is 510mA, and the maximum spatially averaged optical power density is 0.93 kW/cm(2). Arrays consisting of 16 elements of 200 mu m active diameters arranged in a square structure achieve output powers of 1.21 W corresponding to a power density of 1 kW/cm(2) spatially averaged over the effective array chip size. The device threshold current is 1.1 A. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26579
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li T.,Ning Y. Q.,Sun Y. F.,et al. High-power InGaAs VCSEL's single devices and 2-D arrays[J]. Journal of Luminescence,2007,122:571-573.
APA	Li T..,Ning Y. Q..,Sun Y. F..,Wang C..,Liu J..,...&Wang L. J..(2007).High-power InGaAs VCSEL's single devices and 2-D arrays.Journal of Luminescence,122,571-573.
MLA	Li T.,et al."High-power InGaAs VCSEL's single devices and 2-D arrays".Journal of Luminescence 122(2007):571-573.

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