Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy

	Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy
其他题名	论文其他题名
	Sun J. W.; Lu Y. M.; Liu Y. C.; Shen D. Z.; Zhang Z. Z.; Yao B.; Li B. H.; Zhang J. Y.; Zhao D. X.; Fan X. W.
	2007
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	102 期号:4
摘要	The recombination mechanisms of nitrogen-related emissions in p-type ZnO films were investigated by photoluminescence (PL) measurements. The enhanced peak at 3.260 eV was confirmed as a donor-acceptor pair (DAP) transition and the emission around 3.310 eV was assigned to the free electron to acceptor (FA) recombination by studying the temperature evolution of DAP and FA luminescence, calculating the energy level of the corresponding nitrogen acceptor, and measuring the decay time of DAP transition. By comparing the PL spectra of the samples with various hole concentrations, it can be found that as the hole concentration increases, the DAP peak significantly dominates the spectra. In addition, the acceptor binding energy is estimated to be about 120 meV from the FA transition, which is in good agreement with the value calculated by a hydrogenic acceptor model. (c) 2007 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26561
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun J. W.,Lu Y. M.,Liu Y. C.,et al. Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy[J]. Journal of Applied Physics,2007,102(4).
APA	Sun J. W..,Lu Y. M..,Liu Y. C..,Shen D. Z..,Zhang Z. Z..,...&Fan X. W..(2007).Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy.Journal of Applied Physics,102(4).
MLA	Sun J. W.,et al."Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy".Journal of Applied Physics 102.4(2007).

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