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Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE
其他题名论文其他题名
Lu Y. M.; Wang X.; Zhang Z. Z.; Shen D. Z.; Su S. C.; Yao B.; Li B. H.; Zhang J. Y.; Zhao D. X.; Fan X. W.; Tang Z. K.
2007
发表期刊Journal of Crystal Growth
ISSN0022-0248
卷号301页码:373-377
摘要The undoped ZnO thin films grown on Si (111) substrates by plasma-assisted molecular beam epitaxy (P-MBE) were reported. The effects of growth temperature, the thickness of low temperature ZnO buffer layer and Zn/O ratio on the quality of high-temperature-overgrown ZnO main layer were studied by atomic force microscopy (AFM), X-ray diffraction (XRD) and room-temperature photoluminescence (PL) spectra. These results showed that it was difficult to directly obtain high quality ZnO films on Si substrate. By introducing a thin ZnO buffer layer at 350 degrees C, c-axis preferred orientation ZnO films with improved optical properties were obtained at 750 degrees C. However, the thickness of ZnO buffer layer and Zn/O ratio in the ZnO main layer greatly influenced the quality of high-temperature-overgrown ZnO main layer. (c) 2007 Elsevier B.V. All rights reserved.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26558
专题中科院长春光机所知识产出
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Lu Y. M.,Wang X.,Zhang Z. Z.,et al. Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE[J]. Journal of Crystal Growth,2007,301:373-377.
APA Lu Y. M..,Wang X..,Zhang Z. Z..,Shen D. Z..,Su S. C..,...&Tang Z. K..(2007).Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE.Journal of Crystal Growth,301,373-377.
MLA Lu Y. M.,et al."Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE".Journal of Crystal Growth 301(2007):373-377.
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