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Novel semiconductor/superlattice distributed Bragg reflector: Experiment and simulation
其他题名论文其他题名
Yan C. L.; Zhong J. C.; Zhao Y. J.; Hao Y. Q.; Li T.; Sun Y. F.; He C. F.; Shan X. N.; Lu G. G.; Zhang C. Y.
2007
发表期刊Journal of Luminescence
ISSN0022-2313
卷号122页码:838-840
摘要We design a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR), and the reflection spectrum is calculated by employing transfer matrix method. In experiment, this kind of DBR is grown on GaAs (10 0) substrate. From the measured reflection spectrum, the central wavelength is about 810nm with high reflectivity, and the reflection bandwidth is about 100nm. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs, the DBR with center wavelength at 1.3 mu m is also investigated theoretically. The calculated results show that the central wavelength is about 1.3 pm, and the peak reflectivity is up to 99.5% with 30 pair. (c) 2006 Elsevier B.V. All rights reserved.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26545
专题中科院长春光机所知识产出
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Yan C. L.,Zhong J. C.,Zhao Y. J.,et al. Novel semiconductor/superlattice distributed Bragg reflector: Experiment and simulation[J]. Journal of Luminescence,2007,122:838-840.
APA Yan C. L..,Zhong J. C..,Zhao Y. J..,Hao Y. Q..,Li T..,...&Zhang C. Y..(2007).Novel semiconductor/superlattice distributed Bragg reflector: Experiment and simulation.Journal of Luminescence,122,838-840.
MLA Yan C. L.,et al."Novel semiconductor/superlattice distributed Bragg reflector: Experiment and simulation".Journal of Luminescence 122(2007):838-840.
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