Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

	Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy
其他题名	论文其他题名
	Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zheng Z. H.; Yao B.; Zhang J. Y.; Zhao D. X.; Fan X. W.
	2007
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	122 页码:368-370
摘要	We have grown N-doped p-type ZnO films by plasma-assisted molecular beam epitaxy. A dominant photoluminescence around 3.260 eV was observed at low temperature. By studying the dependence of photoluminescence on excitation density at 80 K, the emission around 3.260 eV can be attributed to a donor-acceptor pair transition. Time-resolved PL spectrum was also used to investigate the dynamics of the donor-acceptor pair recombination. The observed non-exponential decay curve was fitted by a fast component and long process. In long decay process, the curve was predicted to follow the power law t(-1). Therefore it can be concluded that the emission at 3.260 eV in our sample is of a tunnel-assisted donor-acceptor pair nature. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26543
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiao S. J.,Lu Y. M.,Shen D. Z.,et al. Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy[J]. Journal of Luminescence,2007,122:368-370.
APA	Jiao S. J..,Lu Y. M..,Shen D. Z..,Zhang Z. Z..,Li B. H..,...&Fan X. W..(2007).Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy.Journal of Luminescence,122,368-370.
MLA	Jiao S. J.,et al."Donor-acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy".Journal of Luminescence 122(2007):368-370.

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