Growth of well-aligned ZnO nanowire arrays on Si substrate

	Growth of well-aligned ZnO nanowire arrays on Si substrate
其他题名	论文其他题名
	Fang F.; Zhao D. X.; Zhang J. Y.; Shen D. Z.; Lu Y. M.; Fan X. W.; Li B. H.; Wang X. H.
	2007
发表期刊	Nanotechnology
ISSN	0957-4484
卷号	18 期号:23
摘要	Well-aligned ZnO nanowire arrays have been successfully synthesized on Si( 100) substrate by a vapour transport process. A ZnO thin film was used as the nucleation sites, which can control the growth orientation of the nanowires. By observation of the initial process of nanowire growth, a vapour transport solid condensation mechanism was proposed for ZnO nanowire growth, in which the role of ZnO thin film was to provide nucleation sites for nanowire growth. It was also found that the nanowire density could be adjusted by varying the thickness of the ZnO thin film. The synthesized ZnO nanowires, which had a single-crystalline wurtzite structure, had diameters of 50-120 nm and lengths of around 5 mu m. The strong ultraviolet emission and weak deep level emission reflect the high optical quality of the nanowires.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26530
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Fang F.,Zhao D. X.,Zhang J. Y.,et al. Growth of well-aligned ZnO nanowire arrays on Si substrate[J]. Nanotechnology,2007,18(23).
APA	Fang F..,Zhao D. X..,Zhang J. Y..,Shen D. Z..,Lu Y. M..,...&Wang X. H..(2007).Growth of well-aligned ZnO nanowire arrays on Si substrate.Nanotechnology,18(23).
MLA	Fang F.,et al."Growth of well-aligned ZnO nanowire arrays on Si substrate".Nanotechnology 18.23(2007).

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