Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quantum wells grown on sapphire substrate

	Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quantum wells grown on sapphire substrate
其他题名	论文其他题名
	Sun J. W.; Lu Y. M.; Liu Y. C.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Zhao D. X.; Fan X. W.
	2007
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	40 期号:21 页码:6541-6544
摘要	ZnO/Mg0.2Zn0.8O multiple quantum wells (MQWs) were grown on a c-plane sapphire (Al2O3) substrate by plasma-assisted molecular beam epitaxy. Both the spontaneous and the stimulated emission properties at room temperature (RT) in MQWs were studied under lower and higher excitation densities. The strong emission at 3.330 eV was observed in the MQWs at RT, which was attributed to the free exciton transition by the temperature-dependent photoluminescence measurement. Significantly, RT stimulated emission caused by inelastic exciton-exciton scattering was observed in the ZnO/Mg0.2Zn0.8O MQWs grown on Al2O3. Thus, the exciton binding energy was determined to be 122 meV in our MQWs.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26518
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun J. W.,Lu Y. M.,Liu Y. C.,et al. Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quantum wells grown on sapphire substrate[J]. Journal of Physics D-Applied Physics,2007,40(21):6541-6544.
APA	Sun J. W..,Lu Y. M..,Liu Y. C..,Shen D. Z..,Zhang Z. Z..,...&Fan X. W..(2007).Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quantum wells grown on sapphire substrate.Journal of Physics D-Applied Physics,40(21),6541-6544.
MLA	Sun J. W.,et al."Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quantum wells grown on sapphire substrate".Journal of Physics D-Applied Physics 40.21(2007):6541-6544.

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