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Two-carrier transport and ferromagnetism in FeSe thin films
其他题名论文其他题名
Wu X. J.; Zhang Z. Z.; Zhang J. Y.; Li B. H.; Ju Z. G.; Lu Y. M.; Li B. S.; Shen D. Z.
2008
发表期刊Journal of Applied Physics
ISSN0021-8979
卷号103期号:11
摘要alpha- and beta-FeSe thin films were grown by metal organic chemical vapor deposition. Compared to the other parameters, the growth temperature shows decisive influence on the phase transition of the FeSe samples. In temperature-dependent electrical measurements, n-type to p-type reversion was observed for both the alpha- or and beta-FeSe samples. Furthermore, the p-type character of the films becomes more and more obvious with increasing the Se/Fe atomic ratio in the samples. Ferromagnetism was observed in the alpha-FeSe films although which is not supported by calculation on density of states. The ferromagnetic character shows significant dependence on Se/Fe atomic ratio in the films and was attributed to the Fe vacancies or Fe clusters in the alpha-FeSe thin films. The magnetic domain and hysteresis loop of the beta-FeSe thin films are also studied. (C) 2008 American Institute of Physics.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26494
专题中科院长春光机所知识产出
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GB/T 7714
Wu X. J.,Zhang Z. Z.,Zhang J. Y.,et al. Two-carrier transport and ferromagnetism in FeSe thin films[J]. Journal of Applied Physics,2008,103(11).
APA Wu X. J..,Zhang Z. Z..,Zhang J. Y..,Li B. H..,Ju Z. G..,...&Shen D. Z..(2008).Two-carrier transport and ferromagnetism in FeSe thin films.Journal of Applied Physics,103(11).
MLA Wu X. J.,et al."Two-carrier transport and ferromagnetism in FeSe thin films".Journal of Applied Physics 103.11(2008).
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