Phase transition of cadmium selenide thin films in MOCVD growth process

	Phase transition of cadmium selenide thin films in MOCVD growth process
其他题名	论文其他题名
	Ju Z. G.; Lu Y. M.; Shan C. X.; Zhang J. Y.; Yao B.; Shen D. Z.
	2008
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	41 期号:1
摘要	Cadmium selenide (CdSe) thin films were fabricated on c-sapphire and GaAs (100) substrates by low pressure metal organic chemical vapour deposition. The structural properties of these CdSe thin films were investigated by x-ray diffraction and photoluminescence spectroscopy. The effects of growth temperature (T(g)) on the structural phase of the CdSe thin films were discussed. Phase transition of CdSe thin films grown on sapphire substrates from zincblende (ZB) to wurtzite (W) was observed with increasing T(g), and the transition critical temperature is 440 degrees C. However, the CdSe films grown on GaAs (100) keep ZB form in the whole range of T(g) investigated from 300 to 500 degrees C.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26484
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ju Z. G.,Lu Y. M.,Shan C. X.,et al. Phase transition of cadmium selenide thin films in MOCVD growth process[J]. Journal of Physics D-Applied Physics,2008,41(1).
APA	Ju Z. G.,Lu Y. M.,Shan C. X.,Zhang J. Y.,Yao B.,&Shen D. Z..(2008).Phase transition of cadmium selenide thin films in MOCVD growth process.Journal of Physics D-Applied Physics,41(1).
MLA	Ju Z. G.,et al."Phase transition of cadmium selenide thin films in MOCVD growth process".Journal of Physics D-Applied Physics 41.1(2008).

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