Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films

	Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films
其他题名	论文其他题名
	Cao P.; Zhao D. X.; Zhang J. Y.; Shen D. Z.; Lu Y. M.; Yao B.; Li B. H.; Bai Y.; Fan X. W.
	2008
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	254 期号:9 页码:2900-2904
摘要	In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH3 plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By Hall-effect measurement, a p-type conductivity was observed for the treated film with the hole density of 2.2 x 10(16) cm(-3). X- ray photoelectron spectroscopy (XPS) results confirmed that nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions. In low temperature photoluminescence spectra, an emission peak corresponding to acceptor - donor pair was observed. From this emission peak we calculated the N-related acceptor binding energy to be 130 meV. (c) 2007 Elsevier B. V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26458
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Cao P.,Zhao D. X.,Zhang J. Y.,et al. Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films[J]. Applied Surface Science,2008,254(9):2900-2904.
APA	Cao P..,Zhao D. X..,Zhang J. Y..,Shen D. Z..,Lu Y. M..,...&Fan X. W..(2008).Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films.Applied Surface Science,254(9),2900-2904.
MLA	Cao P.,et al."Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films".Applied Surface Science 254.9(2008):2900-2904.

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