Ultraviolet Schottky detector based on epitaxial ZnO thin film

	Ultraviolet Schottky detector based on epitaxial ZnO thin film
其他题名	论文其他题名
	Jiang D. Y.; Zhang J. Y.; Lu Y. M.; Liu K. W.; Zhao D. X.; Zhang Z. Z.; Shen D. Z.; Fan X. W.
	2008
发表期刊	Solid-State Electronics
ISSN	0038-1101
卷号	52 期号:5 页码:679-682
摘要	In this paper, we have prepared Schottky type ZnO metal-semiconductor-metal (MSM) ultraviolet (UV) detector. The structural, electrical, and optical measurements were carried out. The detector exhibited a peak responsivity of 0.337 A/W at 360 nm and the dark current was about 1 nA under 3 V bias. An ultraviolet-visible rejection ratio was obtained about more than four orders of magnitude from the fabricated detector. The 10 - 90% rise and fall time were 20 ns and 250 ns, respectively. We proposed that the detector had shown a gain, which was attributed to the trapping of hole carriers at the semiconductor-metal interface. (c) 2007 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26452
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiang D. Y.,Zhang J. Y.,Lu Y. M.,et al. Ultraviolet Schottky detector based on epitaxial ZnO thin film[J]. Solid-State Electronics,2008,52(5):679-682.
APA	Jiang D. Y..,Zhang J. Y..,Lu Y. M..,Liu K. W..,Zhao D. X..,...&Fan X. W..(2008).Ultraviolet Schottky detector based on epitaxial ZnO thin film.Solid-State Electronics,52(5),679-682.
MLA	Jiang D. Y.,et al."Ultraviolet Schottky detector based on epitaxial ZnO thin film".Solid-State Electronics 52.5(2008):679-682.

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