Effect of post annealing on the band gap of Mg(x)Zn(1-x)O thin films

	Effect of post annealing on the band gap of Mg(x)Zn(1-x)O thin films
其他题名	论文其他题名
	Jiang D. Y.; Shen D. Z.; Liu K. W.; Shan C. X.; Zhao Y. M.; Yang T.; Yao B.; Lu Y. M.; Zhang J. Y.
	2008
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	23 期号:3
摘要	In this work, Mg(x)Zn(1-x)O ( MZO) thin films were grown on quartz by rf magnetron sputtering technology. It was found that MZO films possess preferred c-axis orientation and exhibit hexagonal wurtzite structure up to a Mg composition of 44.26 mol%. Furthermore, the band gap determined by absorption spectra was smaller than the theoretical calculation for the as-grown MZO thin film. The band gap blueshifted initially and then redshifted with increasing the annealing temperature of the MZO films. The reason for the shift was attributed to the displacement, effusion of Mg atoms in the films and phase separation at different annealing temperatures.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26450
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiang D. Y.,Shen D. Z.,Liu K. W.,et al. Effect of post annealing on the band gap of Mg(x)Zn(1-x)O thin films[J]. Semiconductor Science and Technology,2008,23(3).
APA	Jiang D. Y..,Shen D. Z..,Liu K. W..,Shan C. X..,Zhao Y. M..,...&Zhang J. Y..(2008).Effect of post annealing on the band gap of Mg(x)Zn(1-x)O thin films.Semiconductor Science and Technology,23(3).
MLA	Jiang D. Y.,et al."Effect of post annealing on the band gap of Mg(x)Zn(1-x)O thin films".Semiconductor Science and Technology 23.3(2008).

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