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Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents
其他题名论文其他题名
Meng L. J.; Gao J. S.; Teixeira V.; dos Santos M. P.
2008
发表期刊Physica Status Solidi a-Applications and Materials Science
ISSN1862-6300
卷号205期号:8页码:1961-1966
摘要Indium tin oxide (IT) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80-120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion beam current (80 mA) show an almost amorphous structure. As the ion beam current is increased, films show a preferred orientation along the (222) direction. AFM measurements show that the surface RMS roughness of the film increases as the current goes up. The optical properties have been studied by measuring the transmittance. It has been found that the film prepared at 100 mA current has the highest transmittance. The optical constants of the films have been calculated by fitting the transmittance. The Hall measurements also showed that the film prepared at 100 mA current has one of the lowere electrical resistivities. FTIR measurements show that the film prepared at 100 mA current has the highest infra-red reflectance. All the measurements show the 100 mA ion beam current can produce good quality ITO films. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26447
专题中科院长春光机所知识产出
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Meng L. J.,Gao J. S.,Teixeira V.,et al. Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents[J]. Physica Status Solidi a-Applications and Materials Science,2008,205(8):1961-1966.
APA Meng L. J.,Gao J. S.,Teixeira V.,&dos Santos M. P..(2008).Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents.Physica Status Solidi a-Applications and Materials Science,205(8),1961-1966.
MLA Meng L. J.,et al."Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents".Physica Status Solidi a-Applications and Materials Science 205.8(2008):1961-1966.
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