Effect of growth ambient on the structure and properties of Mg(x)Zn(1-x)O thin films prepared by radio-frequency magnetron sputtering

	Effect of growth ambient on the structure and properties of Mg(x)Zn(1-x)O thin films prepared by radio-frequency magnetron sputtering
其他题名	论文其他题名
	Cong C. X.; Yao B.; Zhou Q. J.; Chen J. R.
	2008
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	41 期号:10
摘要	Mg(x)Zn(1-x)O thin films were grown by the radio-frequency magnetron sputtering technique in Ar + N(2) and O(2) + N(2) ambient with different nitrogen partial pressure ratios on quartz substrates at 773 K. The correlations between the growth ambient and the resultant films properties were discussed. It is found that Mg concentration, structure and band gap of the MgZnO film can be tuned by increasing the nitrogen partial pressure ratio of the Ar + N(2) ambient, but cannot be tailored by changing the nitrogen partial pressure ratio of the O(2) + N(2) ambient. X-ray diffraction shows that the Mg(x)Zn(1-x)O films grown in the Ar + N(2) ambient consist of wurtzite phase at the nitrogen partial pressure ratios from 0% to 50%, a mixture of wurtzite and cubic phases at the ratios of 78-83%, and a cubic phase at 100%, whereas such structure transformation did not exist in the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient by changing the nitrogen partial pressure ratio. The Mg concentration increases linearly with the increasing nitrogen partial pressure ratio of Ar + N(2), but does not vary with the increasing nitrogen partial pressure ratio of O(2) + N(2). The band gap increases linearly from 3.64 to 4.02 eV for the wurtzite Mg(x)Zn(1-x)O deposited in the Ar + N(2) ambient as nitrogen partial pressure ratio increases from 0% to 50%, but the band gap of the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient keeps a constant of 3.63 eV with oxygen gas and reaches 6.30 eV abruptly in pure nitrogen ambient (without oxygen gas). The Mg(x)Zn(1-x)O films, which are grown in the Ar + N(2) and O(2) + N(2) ambient at nitrogen partial pressure ratio from 50% to 100% and 83% to 100%, respectively, show p-type conduction after annealing.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26439
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Cong C. X.,Yao B.,Zhou Q. J.,et al. Effect of growth ambient on the structure and properties of Mg(x)Zn(1-x)O thin films prepared by radio-frequency magnetron sputtering[J]. Journal of Physics D-Applied Physics,2008,41(10).
APA	Cong C. X.,Yao B.,Zhou Q. J.,&Chen J. R..(2008).Effect of growth ambient on the structure and properties of Mg(x)Zn(1-x)O thin films prepared by radio-frequency magnetron sputtering.Journal of Physics D-Applied Physics,41(10).
MLA	Cong C. X.,et al."Effect of growth ambient on the structure and properties of Mg(x)Zn(1-x)O thin films prepared by radio-frequency magnetron sputtering".Journal of Physics D-Applied Physics 41.10(2008).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Cong-2008-Effect of （484KB）			开放获取	--	浏览下载