Stability of p-type conductivity in nitrogen-doped ZnO thin film

	Stability of p-type conductivity in nitrogen-doped ZnO thin film
其他题名	论文其他题名
	Xiao Z. Y.; Liu Y. C.; Mu R.; Zhao D. X.; Zhang J. Y.
	2008
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	92 期号:5
摘要	The behavior of p-type conductivity in nitrogen-doped ZnO prepared by thermal oxidation of zinc oxynitride thin film was investigated. The sample exhibited a stable p-type characteristic in the darkness over a 1 yr period after deposition. However, when the p-type sample was irradiated by 2.72 eV photons, it underwent a classic-mixed conductivity transition from p type to n type. An anomalously thermal equilibrium process was observed. It took 24 h for the persisted n type photoconductivity to fade away in the dark and transit back to original p type. A local potential fluctuation model was used to explain the transient electrical behavior. (c) 2008 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26414
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xiao Z. Y.,Liu Y. C.,Mu R.,et al. Stability of p-type conductivity in nitrogen-doped ZnO thin film[J]. Applied Physics Letters,2008,92(5).
APA	Xiao Z. Y.,Liu Y. C.,Mu R.,Zhao D. X.,&Zhang J. Y..(2008).Stability of p-type conductivity in nitrogen-doped ZnO thin film.Applied Physics Letters,92(5).
MLA	Xiao Z. Y.,et al."Stability of p-type conductivity in nitrogen-doped ZnO thin film".Applied Physics Letters 92.5(2008).

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