Predicting method of leakage current in multiple-gate amorphous silicon TFTs for active-matrix electrophoretic displays

	Predicting method of leakage current in multiple-gate amorphous silicon TFTs for active-matrix electrophoretic displays
其他题名	论文其他题名
	Yang S.; Jing H.
	2008
发表期刊	Journal of Display Technology
ISSN	1551-319X
卷号	4 期号:3 页码:296-299
摘要	The large off-state drain-source leakage current of the thin-film transistor (TFT) in active-matrix electrophoretic display (AMEPD) may cause severe crosstalk and long pixel refresh time. Multiple-gate amorphous silicon TFT (a-Si TFT) is a common use to overcome this issue. In this paper, we show that Lilt: leakage current of multiple-gate a-Si TFT can be computed from the I-V characteristics of a single TFT by an analytical current model. The predicted leakage currents show good agreement with the expected values in SPICE simulation. This model is also applicable for the multiple-gate a-Si TFTs used in other high voltage driven devices.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26404
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yang S.,Jing H.. Predicting method of leakage current in multiple-gate amorphous silicon TFTs for active-matrix electrophoretic displays[J]. Journal of Display Technology,2008,4(3):296-299.
APA	Yang S.,&Jing H..(2008).Predicting method of leakage current in multiple-gate amorphous silicon TFTs for active-matrix electrophoretic displays.Journal of Display Technology,4(3),296-299.
MLA	Yang S.,et al."Predicting method of leakage current in multiple-gate amorphous silicon TFTs for active-matrix electrophoretic displays".Journal of Display Technology 4.3(2008):296-299.

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