Excitonic electroluminescence from ZnO-based heterojunction light emitting diodes

	Excitonic electroluminescence from ZnO-based heterojunction light emitting diodes
其他题名	论文其他题名
	Sun J. W.; Lu Y. M.; Liu Y. C.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Zhao D. X.; Fan X. W.
	2008
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	41 期号:15
摘要	This work reports on the fabrication and characteristics of n-ZnO/p-GaN and n-ZnO/n-MgZnO/n-ZnO/p-GaN heterojunction light emitting diodes (LEDs). Both devices exhibited diode-like rectifying current-voltage characteristics. Room temperature electroluminescence (EL) spectra for both LEDs consisted of dominant emission at 375 nm and two weaker bands centred at 415 nm and 525 nm, which were attributed to ZnO excitonic transition and defect-related emissions from GaN and ZnO, respectively. Moreover, it was demonstrated that the single heterojunction required a higher injection current to obtain an excitonic EL than that for the n-ZnO/n-MgZnO/n-ZnO/p-GaN LEDs. This indicated that the insertion of the MgZnO layer confined the injection carriers and thus increased the intensity of excitonic emission in the ZnO active region.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26392
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun J. W.,Lu Y. M.,Liu Y. C.,et al. Excitonic electroluminescence from ZnO-based heterojunction light emitting diodes[J]. Journal of Physics D-Applied Physics,2008,41(15).
APA	Sun J. W..,Lu Y. M..,Liu Y. C..,Shen D. Z..,Zhang Z. Z..,...&Fan X. W..(2008).Excitonic electroluminescence from ZnO-based heterojunction light emitting diodes.Journal of Physics D-Applied Physics,41(15).
MLA	Sun J. W.,et al."Excitonic electroluminescence from ZnO-based heterojunction light emitting diodes".Journal of Physics D-Applied Physics 41.15(2008).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Sun-2008-Excitonic e（560KB）			开放获取	--	浏览下载