Changchun Institute of Optics,Fine Mechanics and Physics,CAS
High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction | |
其他题名 | 论文其他题名 |
Zhu H.; Shan C. X.; Yao B.; Li B. H.; Zhang J. Y.; Zhao D. X.; Shen D. Z.; Fan X. W. | |
2008 | |
发表期刊 | Journal of Physical Chemistry C |
ISSN | 1932-7447 |
卷号 | 112期号:51页码:20546-20548 |
摘要 | Undoped n-ZnO films have been deposited onto p-GaN to form a pn heterojunction, and the current-voltage curve of the heterojunction shows obvious rectifying behaviors. A photodetector is fabricated from the heterojunction. Under back-illumination conditions, the GaN layer on one hand acts as a p-type counterpart for the n-ZnO layer, on the other hand as a "filter" that is transparent to the illumination light with wavelength longer than 360 nm. Because of the GaN "filter", the photodetector shows a narrow band-pass response of only 17 nm in width. The results reported in this paper may provide a facile route to photodetectors with high spectrum selectivity. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26386 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhu H.,Shan C. X.,Yao B.,et al. High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction[J]. Journal of Physical Chemistry C,2008,112(51):20546-20548. |
APA | Zhu H..,Shan C. X..,Yao B..,Li B. H..,Zhang J. Y..,...&Fan X. W..(2008).High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction.Journal of Physical Chemistry C,112(51),20546-20548. |
MLA | Zhu H.,et al."High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction".Journal of Physical Chemistry C 112.51(2008):20546-20548. |
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