High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction

	High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction
其他题名	论文其他题名
	Zhu H.; Shan C. X.; Yao B.; Li B. H.; Zhang J. Y.; Zhao D. X.; Shen D. Z.; Fan X. W.
	2008
发表期刊	Journal of Physical Chemistry C
ISSN	1932-7447
卷号	112 期号:51 页码:20546-20548
摘要	Undoped n-ZnO films have been deposited onto p-GaN to form a pn heterojunction, and the current-voltage curve of the heterojunction shows obvious rectifying behaviors. A photodetector is fabricated from the heterojunction. Under back-illumination conditions, the GaN layer on one hand acts as a p-type counterpart for the n-ZnO layer, on the other hand as a "filter" that is transparent to the illumination light with wavelength longer than 360 nm. Because of the GaN "filter", the photodetector shows a narrow band-pass response of only 17 nm in width. The results reported in this paper may provide a facile route to photodetectors with high spectrum selectivity.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26386
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhu H.,Shan C. X.,Yao B.,et al. High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction[J]. Journal of Physical Chemistry C,2008,112(51):20546-20548.
APA	Zhu H..,Shan C. X..,Yao B..,Li B. H..,Zhang J. Y..,...&Fan X. W..(2008).High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction.Journal of Physical Chemistry C,112(51),20546-20548.
MLA	Zhu H.,et al."High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction".Journal of Physical Chemistry C 112.51(2008):20546-20548.

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