High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

	High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns
其他题名	论文其他题名
	Peng J. Y.; Tan H. M.; Wang Y. G.; Ma X. Y.; Miao J. G.; Wang B. S.; Qian L. S.
	2008
发表期刊	Optik
ISSN	0030-4026
卷号	119 期号:14 页码:657-660
摘要	We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO4 laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In0.25Ga0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (C) 2007 Elsevier GmbH. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26378
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Peng J. Y.,Tan H. M.,Wang Y. G.,et al. High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns[J]. Optik,2008,119(14):657-660.
APA	Peng J. Y..,Tan H. M..,Wang Y. G..,Ma X. Y..,Miao J. G..,...&Qian L. S..(2008).High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns.Optik,119(14),657-660.
MLA	Peng J. Y.,et al."High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns".Optik 119.14(2008):657-660.

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