Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Electron field emission properties of a gated conductive nanowire | |
其他题名 | 论文其他题名 |
Lei D.; Wang W. B.; Zeng L. Y.; Liang J. Q. | |
2009 | |
发表期刊 | Physica E-Low-Dimensional Systems & Nanostructures |
ISSN | 1386-9477 |
卷号 | 41期号:7页码:1169-1173 |
摘要 | A gated nanowire model was proposed to estimate the field-emission performance of a conductive nanowire in gated structure. The actual electric fields around the nanowire top and the field-enhancement factor were calculated analytically based on an electrostatic theory. The influence of the device parameters such as the gate and anode voltages, the gate-hole radius, and the radius and length of the nanowire on the field-enhancement factor, the current and apex Current density were discussed in detail. The results show that the field enhancement increases rapidly with the decrease of the gate-hole and nanowire radius, but the former almost increases linearly with the nanowire length. In addition, it was found that the current and Current density at the edge of the nanowire increases exponentially with the gate and anode voltages. (C) 2009 Elsevier B.V. All rights reserved. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26349 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Lei D.,Wang W. B.,Zeng L. Y.,et al. Electron field emission properties of a gated conductive nanowire[J]. Physica E-Low-Dimensional Systems & Nanostructures,2009,41(7):1169-1173. |
APA | Lei D.,Wang W. B.,Zeng L. Y.,&Liang J. Q..(2009).Electron field emission properties of a gated conductive nanowire.Physica E-Low-Dimensional Systems & Nanostructures,41(7),1169-1173. |
MLA | Lei D.,et al."Electron field emission properties of a gated conductive nanowire".Physica E-Low-Dimensional Systems & Nanostructures 41.7(2009):1169-1173. |
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