Fabrication and properties of B-N codoped p-type ZnO thin films

	Fabrication and properties of B-N codoped p-type ZnO thin films
其他题名	论文其他题名
	Sui Y. R.; Yao B.; Hua Z.; Xing G. Z.; Huang X. M.; Yang T.; Gao L. L.; Zhao T. T.; Pan H. L.; Zhu H.; Liu W. W.; Wu T.
	2009
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	42 期号:6
摘要	A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 Omega cm, Hall mobility of 11 cm(2) V(-1) s(-1) and carrier concentration of 1.2 x 10(17) cm(-3), better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26337
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sui Y. R.,Yao B.,Hua Z.,et al. Fabrication and properties of B-N codoped p-type ZnO thin films[J]. Journal of Physics D-Applied Physics,2009,42(6).
APA	Sui Y. R..,Yao B..,Hua Z..,Xing G. Z..,Huang X. M..,...&Wu T..(2009).Fabrication and properties of B-N codoped p-type ZnO thin films.Journal of Physics D-Applied Physics,42(6).
MLA	Sui Y. R.,et al."Fabrication and properties of B-N codoped p-type ZnO thin films".Journal of Physics D-Applied Physics 42.6(2009).

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