Mechanism of p-type conductivity for phosphorus-doped ZnO thin film

	Mechanism of p-type conductivity for phosphorus-doped ZnO thin film
其他题名	论文其他题名
	Yao B.; Xie Y. P.; Cong C. X.; Zhao H. J.; Sui Y. R.; Yang T.; He Q.
	2009
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	42 期号:1
摘要	A p-type phosphorus-doped ZnO film (ZnO : P) was grown on a quartz substrate by sputtering a ZnO target mixed with 2 wt% P(2)O(5) using a mixture of Ar and O(2) and then annealed rapidly at 750 degrees C for 5 min in air ambient. The lattice constant of the c-axis was 0.5176 nm, smaller than the value of 0.5211 nm of pure ZnO, implying substitutional P at a Zn antisite (P(Zn)). The binding energy of P(2p1/3) is 133.5 eV, which is different from that of the P-O bond in P(2)O(5) and of the P-Zn bond in Zn(3)P(2), but close to that of P-O-P and P-O-Zn bonds in zinc phosphate glass mainly composed of ZnO and P(2)O(5). The 80 K photoluminescence spectrum shows neutral acceptor bound exciton emission at 3.34 eV. Based on the above experimental results, it is suggested that P substitutes for a Zn antisite in the ZnO : P and forms an acceptor complex with two Zn vacancies, and the acceptor complex is responsible for p-type conductivity of ZnO : P.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26336
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yao B.,Xie Y. P.,Cong C. X.,et al. Mechanism of p-type conductivity for phosphorus-doped ZnO thin film[J]. Journal of Physics D-Applied Physics,2009,42(1).
APA	Yao B..,Xie Y. P..,Cong C. X..,Zhao H. J..,Sui Y. R..,...&He Q..(2009).Mechanism of p-type conductivity for phosphorus-doped ZnO thin film.Journal of Physics D-Applied Physics,42(1).
MLA	Yao B.,et al."Mechanism of p-type conductivity for phosphorus-doped ZnO thin film".Journal of Physics D-Applied Physics 42.1(2009).

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