The bipolar doping of ZnS via native defects and external dopants

	The bipolar doping of ZnS via native defects and external dopants
其他题名	论文其他题名
	Gai Y. Q.; Li J. B.; Yao B.; Xia J. B.
	2009
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	105 期号:11
摘要	By employing first-principle total-energy calculations, a systematic study of the dopability of ZnS to be both n- and p-types compared with that of ZnO is carried out. We find that all the attempted acceptor dopants, group V substituting on the S lattice site and group I and IB on the Zn sites in ZnS, have lower ionization energies than the corresponding ones in ZnO. This can be accounted for by the fact that ZnS has relative higher valence band maximum than ZnO. Native ZnS is weak p-type under S-rich condition, as the abundant acceptor V-Zn has rather large ionization energy. Self-compensations by the formation of interstitial donors in group I and IB-doped p-type ZnS can be avoided when sample is prepared under S-rich condition. In terms of ionization energies, Li-Zn and N-S are the preferred acceptors in ZnS. Native n- type doping of ZnS is limited by the spontaneous formation of intrinsic V-Zn(2-); high efficient n-type doping with dopants is harder to achieve than in ZnO because of the readiness of forming native compensating centers and higher ionization energy of donors in ZnS. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3103585]
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26324
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gai Y. Q.,Li J. B.,Yao B.,et al. The bipolar doping of ZnS via native defects and external dopants[J]. Journal of Applied Physics,2009,105(11).
APA	Gai Y. Q.,Li J. B.,Yao B.,&Xia J. B..(2009).The bipolar doping of ZnS via native defects and external dopants.Journal of Applied Physics,105(11).
MLA	Gai Y. Q.,et al."The bipolar doping of ZnS via native defects and external dopants".Journal of Applied Physics 105.11(2009).

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