Femtosecond laser induced submicrometer structures on the ablation crater walls of II-VI semiconductors in water

	Femtosecond laser induced submicrometer structures on the ablation crater walls of II-VI semiconductors in water
其他题名	论文其他题名
	Gong W. W.; Zheng Z. H.; Zheng J. J.; Zhao H. F.; Ren X. G.; Lu S. Z.
	2009
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	255 期号:7 页码:4351-4354
摘要	Femtosecond laser ablations (100 fs, 800 nm, 0.2 mJ/pulse) were performed to produce craters on CdS, ZnS:Cu and ZnSe wafers in water. On the surface of the crater walls, a variety of submicrostructural formations were presented, such as the ripples and network structures for CdS, the subwavelength ripples and columnar structures for ZnS: Cu, even the regular cubic-shaped submicron rods for ZnSe. Based on the field-emission scanning electron microscope (FE-SEM) study of the different characteristic surface morphologies, the possible formation mechanisms were discussed correspondingly. For example, two distinct mechanisms are contributing to the different styles of ripples formed on CdS and ZnS: Cu. The former is the interference effects between the incoming laser beam and scattered surface wave, while the latter is the self-organization structure formation. In addition, the re-crystallization of the water-confined hot plasma would play an important role in the formation of ZnS:Cu column structures and ZnSe rods. (C) 2008 Elsevier B. V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26314
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gong W. W.,Zheng Z. H.,Zheng J. J.,et al. Femtosecond laser induced submicrometer structures on the ablation crater walls of II-VI semiconductors in water[J]. Applied Surface Science,2009,255(7):4351-4354.
APA	Gong W. W.,Zheng Z. H.,Zheng J. J.,Zhao H. F.,Ren X. G.,&Lu S. Z..(2009).Femtosecond laser induced submicrometer structures on the ablation crater walls of II-VI semiconductors in water.Applied Surface Science,255(7),4351-4354.
MLA	Gong W. W.,et al."Femtosecond laser induced submicrometer structures on the ablation crater walls of II-VI semiconductors in water".Applied Surface Science 255.7(2009):4351-4354.

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