High-Power Large-Aperture Bottom-Emitting 980-nm VCSELs With Integrated GaAs Microlens

	High-Power Large-Aperture Bottom-Emitting 980-nm VCSELs With Integrated GaAs Microlens
其他题名	论文其他题名
	Wang Z. F.; Ning Y. Q.; Li T.; Cui J. J.; Zhang Y.; Liu G. Y.; Zhang X.; Qin L.; Liu Y.; Wang L. J.
	2009
发表期刊	Ieee Photonics Technology Letters
ISSN	1041-1135
卷号	21 期号:1—4 页码:239-241
摘要	Microlens-integrated bottom-emitting 980-nm vertical-cavity surface-emitting lasers (VCSELs) with an emitting window aperture of 400 mu m have been fabricated. A novel material structure with nine InGaAs-GaAsP quantum wells and slightly decreased reflectivity of n-type distributed Bragg reflectors (n-DBRs) are employed to increase the output power. A convex microlens is fabricated by a one-step diffusion-limited wet-etching technique on the GaA.s substrate. The diameter of the active layer is about 200 pm after lateral oxidation, and the nominal diameter of the microlens is 400 mu m. The maximum output power is 200 mW at continuous-wave operation at room temperature. The far-field divergence angles theta(parallel to) and theta(perpendicular to) of the single device at a current of 4A are 8.7 degrees and 8.4 degrees, respectively. The optical beam performance between the microlens-integrated VCSEL and ordinary VCSEL is compared.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26295
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang Z. F.,Ning Y. Q.,Li T.,et al. High-Power Large-Aperture Bottom-Emitting 980-nm VCSELs With Integrated GaAs Microlens[J]. Ieee Photonics Technology Letters,2009,21(1—4):239-241.
APA	Wang Z. F..,Ning Y. Q..,Li T..,Cui J. J..,Zhang Y..,...&Wang L. J..(2009).High-Power Large-Aperture Bottom-Emitting 980-nm VCSELs With Integrated GaAs Microlens.Ieee Photonics Technology Letters,21(1—4),239-241.
MLA	Wang Z. F.,et al."High-Power Large-Aperture Bottom-Emitting 980-nm VCSELs With Integrated GaAs Microlens".Ieee Photonics Technology Letters 21.1—4(2009):239-241.

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