Phosphorus-Doped p-Type ZnO Nanorods and ZnO Nanorod p-n Homojunction LED Fabricated by Hydrothermal Method

	Phosphorus-Doped p-Type ZnO Nanorods and ZnO Nanorod p-n Homojunction LED Fabricated by Hydrothermal Method
其他题名	论文其他题名
	Fang X.; Li J. H.; Zhao D. X.; Shen D. Z.; Li B. H.; Wang X. H.
	2009
发表期刊	Journal of Physical Chemistry C
ISSN	1932-7447
卷号	113 期号:50 页码:21208-21212
摘要	Phosphorus-doped ZnO nanorods and ZnO nanorod homojunctions were prepared by a hydrothermal method. The Structural and photoluminescent (PL) characterizations showed the P atoms doped into the ZnO crystal lattice. In low-temperature It spectra the emission peaks located at 3.310 and 3.241 eV were observed, which could be attributed to a conduction band to the phosphorus-related acceptor transition and a donor-acceptor pair transition, respectively. ZnO homojunctions were synthesized by P-doped ZnO nanorods grown oil undoped ZnO nanorods. The current-voltage (I-V) measurement based oil the ZnO nanorod p-n homojunctions showed I typical semiconductor rectification characteristic with a turn-on voltage of about 3 14 V, which meant the Conductivity of the P-doped ZnO nanorod might be a p-type conductivity. The electroluminescence was observed at room temperature for this homojunction, which contained a violet-blue emission and a broad visible band emission
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26290
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Fang X.,Li J. H.,Zhao D. X.,et al. Phosphorus-Doped p-Type ZnO Nanorods and ZnO Nanorod p-n Homojunction LED Fabricated by Hydrothermal Method[J]. Journal of Physical Chemistry C,2009,113(50):21208-21212.
APA	Fang X.,Li J. H.,Zhao D. X.,Shen D. Z.,Li B. H.,&Wang X. H..(2009).Phosphorus-Doped p-Type ZnO Nanorods and ZnO Nanorod p-n Homojunction LED Fabricated by Hydrothermal Method.Journal of Physical Chemistry C,113(50),21208-21212.
MLA	Fang X.,et al."Phosphorus-Doped p-Type ZnO Nanorods and ZnO Nanorod p-n Homojunction LED Fabricated by Hydrothermal Method".Journal of Physical Chemistry C 113.50(2009):21208-21212.

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