Enhanced photoluminescence caused by localized excitons observed in MgZnO alloy

	Enhanced photoluminescence caused by localized excitons observed in MgZnO alloy
其他题名	论文其他题名
	Zhu H.; Shan C. X.; Li B. H.; Zhang Z. Z.; Zhang J. Y.; Yao B.; Shen D. Z.; Fan X. W.
	2009
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	105 期号:10
摘要	Temperature-dependent photoluminescence of MgZnO alloy film has been studied, and it is found that the emission intensity increases significantly at a certain temperature range and then decreases when increasing temperature further. The anomalous increase is resulted from the localized excitons in MgZnO alloy, as revealed by the enhanced second-order longitudinal optical phonon in the Raman spectrum of the MgZnO film. A schematic model was suggested to depict the carrier transportation process in the MgZnO film considering the existence of localized exciton states. The results reported in this paper indicate that localized excitons in MgZnO alloy can result in greatly enhanced emission efficiency, which is eagerly wanted for the application of ZnO-based materials in high-efficiency light-emitting devices.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26276
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhu H.,Shan C. X.,Li B. H.,et al. Enhanced photoluminescence caused by localized excitons observed in MgZnO alloy[J]. Journal of Applied Physics,2009,105(10).
APA	Zhu H..,Shan C. X..,Li B. H..,Zhang Z. Z..,Zhang J. Y..,...&Fan X. W..(2009).Enhanced photoluminescence caused by localized excitons observed in MgZnO alloy.Journal of Applied Physics,105(10).
MLA	Zhu H.,et al."Enhanced photoluminescence caused by localized excitons observed in MgZnO alloy".Journal of Applied Physics 105.10(2009).

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