Calculation of electron emission from a gated single nanowire

	Calculation of electron emission from a gated single nanowire
其他题名	论文其他题名
	Lei D.; Wang W. B.; Zeng L. Y.; Liang J. Q.
	2009
发表期刊	Journal of Vacuum Science & Technology B
ISSN	1071-1023
卷号	27 期号:5 页码:2217-2221
摘要	The field-enhancement factor beta on an individual nanowire with flattop was calculated analytically by the electrostatic method in a gated structure. To evaluate the influences of the geometrical parameters-including the gate-hole radius R, nanowire radius r(0), nanowire length L, and gate-anode distance d(2) for beta-the authors proposed an ideal model of the gated single nanowire (L
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26272
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Lei D.,Wang W. B.,Zeng L. Y.,et al. Calculation of electron emission from a gated single nanowire[J]. Journal of Vacuum Science & Technology B,2009,27(5):2217-2221.
APA	Lei D.,Wang W. B.,Zeng L. Y.,&Liang J. Q..(2009).Calculation of electron emission from a gated single nanowire.Journal of Vacuum Science & Technology B,27(5),2217-2221.
MLA	Lei D.,et al."Calculation of electron emission from a gated single nanowire".Journal of Vacuum Science & Technology B 27.5(2009):2217-2221.