Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering | |
其他题名 | 论文其他题名 |
Zhao Y. M.; Zhang J. Y.; Jiang D. Y.; Shan C. X.; Zhang Z. Z.; Yao B.; Zhao D. X.; Shen D. Z. | |
2009 | |
发表期刊 | Acs Applied Materials & Interfaces |
ISSN | 1944-8244 |
卷号 | 1期号:11页码:2428-2430 |
摘要 | The metal-semiconductor-metal ultraviolet (UV) photodetector was fabricated on the Mg(0.47)Zn(0.53)O layer grown by radio-frequency magnetron cosputtering. The photodetector shows the peak response at 290 nm with a cutoff wavelength at 312 nm. It exhibits a very low dark current of about 3 pA at 5 V bias, and the UV-visible rejection ratio (R = 290 nm/R = 400 nm) is more than 4 orders of magnitude. The transient response for the detector was measured, and it was Found that the rise time is 10 ns and the fall time is 30 ns. The reason for the short response time is related to the Schottky structure. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26269 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhao Y. M.,Zhang J. Y.,Jiang D. Y.,et al. Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering[J]. Acs Applied Materials & Interfaces,2009,1(11):2428-2430. |
APA | Zhao Y. M..,Zhang J. Y..,Jiang D. Y..,Shan C. X..,Zhang Z. Z..,...&Shen D. Z..(2009).Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering.Acs Applied Materials & Interfaces,1(11),2428-2430. |
MLA | Zhao Y. M.,et al."Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering".Acs Applied Materials & Interfaces 1.11(2009):2428-2430. |
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