Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering

	Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering
其他题名	论文其他题名
	Zhao Y. M.; Zhang J. Y.; Jiang D. Y.; Shan C. X.; Zhang Z. Z.; Yao B.; Zhao D. X.; Shen D. Z.
	2009
发表期刊	Acs Applied Materials & Interfaces
ISSN	1944-8244
卷号	1 期号:11 页码:2428-2430
摘要	The metal-semiconductor-metal ultraviolet (UV) photodetector was fabricated on the Mg(0.47)Zn(0.53)O layer grown by radio-frequency magnetron cosputtering. The photodetector shows the peak response at 290 nm with a cutoff wavelength at 312 nm. It exhibits a very low dark current of about 3 pA at 5 V bias, and the UV-visible rejection ratio (R = 290 nm/R = 400 nm) is more than 4 orders of magnitude. The transient response for the detector was measured, and it was Found that the rise time is 10 ns and the fall time is 30 ns. The reason for the short response time is related to the Schottky structure.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26269
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao Y. M.,Zhang J. Y.,Jiang D. Y.,et al. Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering[J]. Acs Applied Materials & Interfaces,2009,1(11):2428-2430.
APA	Zhao Y. M..,Zhang J. Y..,Jiang D. Y..,Shan C. X..,Zhang Z. Z..,...&Shen D. Z..(2009).Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering.Acs Applied Materials & Interfaces,1(11),2428-2430.
MLA	Zhao Y. M.,et al."Ultraviolet Photodetector Based on a MgZnO Film Grown by Radio-Frequency Magnetron Sputtering".Acs Applied Materials & Interfaces 1.11(2009):2428-2430.

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