A facile route to arsenic-doped p-type ZnO films

	A facile route to arsenic-doped p-type ZnO films
其他题名	论文其他题名
	Wang S. P.; Shan C. X.; Li B. H.; Zhang J. Y.; Yao B.; Shen D. Z.; Fan X. W.
	2009
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	311 期号:14 页码:3577-3580
摘要	Undoped zinc oxide (ZnO) films have been prepared on sapphire substrates in a molecular beam epitaxy technique, and the films were annealed in air ambient along with a GaAs wafer. Arsenic in the GaAs wafer will evaporate, and enter into the ZnO films. In this facile way, arsenic-doped p-ZnO has been obtained. Hall measurements reveal that the hole concentration and Hall mobility of the ZnO:As films obtained in this way can reach 3.7 x 10(17) cm(-3) and 2.8 cm(2) V(-1) S(-1), respectively. X-ray photoelectron spectroscopy confirms the incorporation of arsenic into the ZnO films. The activation energy of the acceptors derived from temperature-dependent Hall measurement is about 164 meV. (C) 2009 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26243
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang S. P.,Shan C. X.,Li B. H.,et al. A facile route to arsenic-doped p-type ZnO films[J]. Journal of Crystal Growth,2009,311(14):3577-3580.
APA	Wang S. P..,Shan C. X..,Li B. H..,Zhang J. Y..,Yao B..,...&Fan X. W..(2009).A facile route to arsenic-doped p-type ZnO films.Journal of Crystal Growth,311(14),3577-3580.
MLA	Wang S. P.,et al."A facile route to arsenic-doped p-type ZnO films".Journal of Crystal Growth 311.14(2009):3577-3580.

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