Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes

	Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes
其他题名	论文其他题名
	Zhu H.; Shan C. X.; Li B. H.; Zhang J. Y.; Yao B.; Zhang Z. Z.; Zhao D. X.; Shen D. Z.; Fan X. W.
	2009
发表期刊	Journal of Physical Chemistry C
ISSN	1932-7447
卷号	113 期号:7 页码:2980-2982
摘要	We report on the fabrication of an n-Mg(0.12)Zn(0.88)O/p-GaN heterojunction light-emitting diode with an MgO dielectric interlayer by plasma-assisted molecular beam epitaxy. The current-voltage curve of the heterojunction diode showed obvious rectifying characteristics with a threshold voltage of about 8 V. Under forward bias,, an ultraviolet electroluminescence (EL) emission located at about 374 nm coming from the Mg(0.12)Zn(0.88)O layer was observed at room temperature. This is one of the shortest EL emissions observed in ZnO-based pn junctions to the best of our knowledge. The origin of the EL emission was elucidated in terms of the carrier transportation process modulated by the MgO interlayer in the heterojunction.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26227
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhu H.,Shan C. X.,Li B. H.,et al. Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes[J]. Journal of Physical Chemistry C,2009,113(7):2980-2982.
APA	Zhu H..,Shan C. X..,Li B. H..,Zhang J. Y..,Yao B..,...&Fan X. W..(2009).Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes.Journal of Physical Chemistry C,113(7),2980-2982.
MLA	Zhu H.,et al."Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes".Journal of Physical Chemistry C 113.7(2009):2980-2982.

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