Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes | |
其他题名 | 论文其他题名 |
Zhu H.; Shan C. X.; Li B. H.; Zhang J. Y.; Yao B.; Zhang Z. Z.; Zhao D. X.; Shen D. Z.; Fan X. W. | |
2009 | |
发表期刊 | Journal of Physical Chemistry C
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ISSN | 1932-7447 |
卷号 | 113期号:7页码:2980-2982 |
摘要 | We report on the fabrication of an n-Mg(0.12)Zn(0.88)O/p-GaN heterojunction light-emitting diode with an MgO dielectric interlayer by plasma-assisted molecular beam epitaxy. The current-voltage curve of the heterojunction diode showed obvious rectifying characteristics with a threshold voltage of about 8 V. Under forward bias,, an ultraviolet electroluminescence (EL) emission located at about 374 nm coming from the Mg(0.12)Zn(0.88)O layer was observed at room temperature. This is one of the shortest EL emissions observed in ZnO-based pn junctions to the best of our knowledge. The origin of the EL emission was elucidated in terms of the carrier transportation process modulated by the MgO interlayer in the heterojunction. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26227 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhu H.,Shan C. X.,Li B. H.,et al. Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes[J]. Journal of Physical Chemistry C,2009,113(7):2980-2982. |
APA | Zhu H..,Shan C. X..,Li B. H..,Zhang J. Y..,Yao B..,...&Fan X. W..(2009).Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes.Journal of Physical Chemistry C,113(7),2980-2982. |
MLA | Zhu H.,et al."Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes".Journal of Physical Chemistry C 113.7(2009):2980-2982. |
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