Morphology Instability of Silicon Nitride Nanowires

	Morphology Instability of Silicon Nitride Nanowires
其他题名	论文其他题名
	Wang H. T.; Yang W. Y.; Xie Z. P.; Wang Y. S.; Xing F.; An L. A.
	2009
发表期刊	Journal of Physical Chemistry C
ISSN	1932-7447
卷号	113 期号:15 页码:5902-5905
摘要	We report that cylinder-shaped Si(3)N(4) nanowires are not stable and can gradually transform into nanobelts via surface diffusion during high-temperature annealing. We demonstrate that such instability is driven by the requirements for reducing overall surface energy. The resultant nanobelts have the same width-to-thickness ratio, suggesting a stable morphology. A model in terms of surface energy is proposed to explain the formation of such stable morphology, which agrees well with experimental results. Our result suggests that instability could be a limiting factor for high-temperature applications of ID nanostructures.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26226
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang H. T.,Yang W. Y.,Xie Z. P.,et al. Morphology Instability of Silicon Nitride Nanowires[J]. Journal of Physical Chemistry C,2009,113(15):5902-5905.
APA	Wang H. T.,Yang W. Y.,Xie Z. P.,Wang Y. S.,Xing F.,&An L. A..(2009).Morphology Instability of Silicon Nitride Nanowires.Journal of Physical Chemistry C,113(15),5902-5905.
MLA	Wang H. T.,et al."Morphology Instability of Silicon Nitride Nanowires".Journal of Physical Chemistry C 113.15(2009):5902-5905.

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