Fabrication and characterization of ZnO film based UV photodetector

	Fabrication and characterization of ZnO film based UV photodetector
其他题名	论文其他题名
	Liu C.; Zhang B. P.; Lu Z. W.; Binh N. T.; Wakatsuki K.; Segawa Y.; Mu R.
	2009
发表期刊	Journal of Materials Science-Materials in Electronics
ISSN	0957-4522
卷号	20 期号:3 页码:197-201
摘要	ZnO films were deposited on Al(2)O(3) substrates by metalorganic chemical vapor deposition (MOCVD) at temperatures of 400, 450 and 500 A degrees C. The photoconductivity of the films has been analyzed for ultraviolet detector application. The changes in photoresponse and current-voltage (I-V) are correlated with the deposition temperatures and microcrystalline structures. The study suggested that the photoresponse originating from bulk- and surface-related processes. For a film deposited at 400 A degrees C, a 1 ms fast rising time and a 5 ms fall time were observed. The photoresponsivity is 24 A/W with a 3 V bias.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26217
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu C.,Zhang B. P.,Lu Z. W.,et al. Fabrication and characterization of ZnO film based UV photodetector[J]. Journal of Materials Science-Materials in Electronics,2009,20(3):197-201.
APA	Liu C..,Zhang B. P..,Lu Z. W..,Binh N. T..,Wakatsuki K..,...&Mu R..(2009).Fabrication and characterization of ZnO film based UV photodetector.Journal of Materials Science-Materials in Electronics,20(3),197-201.
MLA	Liu C.,et al."Fabrication and characterization of ZnO film based UV photodetector".Journal of Materials Science-Materials in Electronics 20.3(2009):197-201.

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