Metal-Oxide-Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain

	Metal-Oxide-Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain
其他题名	论文其他题名
	Zhu H.; Shan C. X.; Wang L. K.; Zheng J.; Zhang J. Y.; Yao B.; Shen D. Z.
	2010
发表期刊	Journal of Physical Chemistry C
ISSN	1932-7447
卷号	114 期号:15 页码:7169-7172
摘要	A Au/MgO/MgZnO metal-oxide-semiconductor-structured photodetector was fabricated. The responsivity of the photodetector was about 2 orders of magnitude larger than that of the Au/MgZnO metal-semiconductor-structured photodetector fabricated under the same procedure except that no MgO layer was introduced. The detectivity of the photodetector is about 1 order of magnitude larger than the corresponding value of Si photodetector that is widely employed for ultraviolet detection currently. The enhanced responsivity was attributed to the carrier multiplication occurring in the MgO layer via impact ionization. The results reported in this paper may provide a facile route to ultraviolet photodetectors with high internal gain.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26212
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhu H.,Shan C. X.,Wang L. K.,et al. Metal-Oxide-Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain[J]. Journal of Physical Chemistry C,2010,114(15):7169-7172.
APA	Zhu H..,Shan C. X..,Wang L. K..,Zheng J..,Zhang J. Y..,...&Shen D. Z..(2010).Metal-Oxide-Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain.Journal of Physical Chemistry C,114(15),7169-7172.
MLA	Zhu H.,et al."Metal-Oxide-Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain".Journal of Physical Chemistry C 114.15(2010):7169-7172.

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