The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods

	The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods
其他题名	论文其他题名
	Ding M.; Yao B.; Zhao D. X.; Fang F.; Shen D. Z.; Zhang Z. Z.
	2010
发表期刊	Thin Solid Films
ISSN	0040-6090
卷号	518 期号:15 页码:4390-4393
摘要	As-doped sub-micron ZnO rods were realized by a simple thermal diffusion process using a GaAs wafer as an arsenic resource. The surface of the sub-micron ZnO rods became rough and the morphology of As-doped sub-micron ZnO rods changed markedly with increasing diffusion temperature. From the results of energy-dispersive X-ray spectroscopy, X-ray diffraction and photoluminescence, arsenic elements were confirmed to be introduced into the sub-micron ZnO rods. The acceptor ionization energy was deduced to be about 110 meV based on the temperature-dependent PL spectra. (C) 2010 Published by Elsevier B.V.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26185
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ding M.,Yao B.,Zhao D. X.,et al. The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods[J]. Thin Solid Films,2010,518(15):4390-4393.
APA	Ding M.,Yao B.,Zhao D. X.,Fang F.,Shen D. Z.,&Zhang Z. Z..(2010).The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods.Thin Solid Films,518(15),4390-4393.
MLA	Ding M.,et al."The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods".Thin Solid Films 518.15(2010):4390-4393.

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