On the origin of intrinsic donors in ZnO

	On the origin of intrinsic donors in ZnO
其他题名	论文其他题名
	Sun F.; Shan C. X.; Wang S. P.; Li B. H.; Zhang J. Y.; Zhang Z. Z.; Zhao D. X.; Yao B.; Shen D. Z.; Fan X. W.
	2010
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	256 期号:11 页码:3390-3393
摘要	As-grown undoped zinc oxide (ZnO) films have been annealed in zinc-rich, oxygen-rich and vacuum ambient, and the electron concentration varied greatly after the annealing process. It decreased nearly two orders of magnitude after the sample was annealed in oxygen, while increased nearly three times after annealed in metallic zinc ambient, and increased slightly after annealed in vacuum. It was found that the variation trend of the electron concentration is always the same with the expected variation of oxygen vacancy (V(O)) under the three investigated conditions, it is thus speculated that VO may be the dominant donor source in ZnO. By supplying more oxygen during the growth process to suppress VO, ZnO films with lower electron concentration were obtained, which verifies the above speculation. (C) 2009 Elsevier B. V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26184
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun F.,Shan C. X.,Wang S. P.,et al. On the origin of intrinsic donors in ZnO[J]. Applied Surface Science,2010,256(11):3390-3393.
APA	Sun F..,Shan C. X..,Wang S. P..,Li B. H..,Zhang J. Y..,...&Fan X. W..(2010).On the origin of intrinsic donors in ZnO.Applied Surface Science,256(11),3390-3393.
MLA	Sun F.,et al."On the origin of intrinsic donors in ZnO".Applied Surface Science 256.11(2010):3390-3393.

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