Post-annealing influence on electrical properties and photoluminescence of B-N codoping ZnO thin films

	Post-annealing influence on electrical properties and photoluminescence of B-N codoping ZnO thin films
其他题名	论文其他题名
	Sui Y. R.; Yao B.; Yang J. H.; Gao L. L.; Yang T.; Deng R.; Ding M.; Zhao T. T.; Huang X. M.; Pan H. L.; Shen D. Z.
	2010
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	130 期号:6 页码:1101-1105
摘要	B-N codoped ZnO (ZnO:(B,N)) films were grown on quartz substrate by radio-frequency (rf) magnetron sputtering. The influence of post-annealing ambient on electrical and optical properties of ZnO:(B,N) films were investigated using Hall and Photoluminescence (PL) measurement, respectively. Electrical properties studies indicate that both post-annealing ZnO:(B,N) showed p-type conduction. However, compared with ZnO:(B,N) annealed in oxygen, the ZnO:(B,N) annealed in vacuum have low resistivity and high concentration. The PL spectra indicate that two new emission bands located at 3.303 and 3.208 eV originate from the recombination of A(0)X and FA related to N acceptor for the annealed p-ZnO:(B,N) in vacuum, but of A(0)X, FA related to Zn vacancy for the annealed p-ZnO:(B,N) in oxygen. The mechanism of influence of post-annealing on the electrical and optical properties of the ZnO:(B,N) film is discussed in this work. (C) 2010 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26179
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sui Y. R.,Yao B.,Yang J. H.,et al. Post-annealing influence on electrical properties and photoluminescence of B-N codoping ZnO thin films[J]. Journal of Luminescence,2010,130(6):1101-1105.
APA	Sui Y. R..,Yao B..,Yang J. H..,Gao L. L..,Yang T..,...&Shen D. Z..(2010).Post-annealing influence on electrical properties and photoluminescence of B-N codoping ZnO thin films.Journal of Luminescence,130(6),1101-1105.
MLA	Sui Y. R.,et al."Post-annealing influence on electrical properties and photoluminescence of B-N codoping ZnO thin films".Journal of Luminescence 130.6(2010):1101-1105.

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