Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen

	Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen
其他题名	论文其他题名
	Wang X. H.; Yao B.; Cong C. X.; Wei Z. P.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Lu Y. M.; Zhao D. X.; Zhang J. Y.; Fan X. W.
	2010
发表期刊	Thin Solid Films
ISSN	0040-6090
卷号	518 期号:12 页码:3428-3431
摘要	Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen (denoted as ZnO:(Li, N)) were investigated by the temperature-dependent Hall-effect measurements. The hole mobility of the ZnO:(Li, N) firstly increases with increasing temperature from 85 to 140 K, and then decreases from 140 to 300 K. The comparison of experimental results and theoretical models shows that the mobility at temperature below 140 K is mainly affected by the grain boundary scattering, whereas the hole mobility above 140 K is dominated by mixed scatterings, involving lattice vibration, dislocation, and ionized impurity. (C) 2009 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26160
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X. H.,Yao B.,Cong C. X.,et al. Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen[J]. Thin Solid Films,2010,518(12):3428-3431.
APA	Wang X. H..,Yao B..,Cong C. X..,Wei Z. P..,Shen D. Z..,...&Fan X. W..(2010).Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen.Thin Solid Films,518(12),3428-3431.
MLA	Wang X. H.,et al."Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen".Thin Solid Films 518.12(2010):3428-3431.

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