Growth ambient dependent electrical properties of lithium and nitrogen dual-doped ZnO films prepared by radio-frequency magnetron sputtering

	Growth ambient dependent electrical properties of lithium and nitrogen dual-doped ZnO films prepared by radio-frequency magnetron sputtering
其他题名	论文其他题名
	Zhao T. T.; Yang T.; Yao B.; Cong C. X.; Sui Y. R.; Xing G. Z.; Sun Y.; Su S. C.; Zhu H.; Shen D. Z.
	2010
发表期刊	Thin Solid Films
ISSN	0040-6090
卷号	518 期号:12 页码:3289-3292
摘要	Lithium (Li) and nitrogen (N) dual-doped ZnO films with wurtzite structure were prepared by radio-frequency magnetron sputtering ZnO target with Li(3)N in growth ambient of pure Ar and the mixture of Ar and O(2), respectively, and then post annealing techniques. The film showed week p-type conductivity as the ambient was pure Ar, but stable p-type conductivity with a hole concentration of 3.46 x 10(17) cm(-3), Hall mobility of 5.27 cm(2)/Vs and resistivity of 3.43 Omega cm when the ambient is the mixture of Ar and O(2) with the molar ratio of 60:1. The stable p-type conductivity is due to substitution of Li for Zn (Li(Zn)) and formation of complex of interstitial Li (Li(i)) and substitutional N at O site, the former forms a Li(Zn) acceptor, and the latter depresses compensation of Li(i) donor for Li(Zn) acceptor. The level of the Li(Zn) acceptor is estimated to be 131.6 meV by using temperature-dependent photoluminescence spectrum measurement and Haynes rule. Mechanism about the effect of the ambient on the conductivity is discussed in the present work. (C) 2009 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26154
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao T. T.,Yang T.,Yao B.,et al. Growth ambient dependent electrical properties of lithium and nitrogen dual-doped ZnO films prepared by radio-frequency magnetron sputtering[J]. Thin Solid Films,2010,518(12):3289-3292.
APA	Zhao T. T..,Yang T..,Yao B..,Cong C. X..,Sui Y. R..,...&Shen D. Z..(2010).Growth ambient dependent electrical properties of lithium and nitrogen dual-doped ZnO films prepared by radio-frequency magnetron sputtering.Thin Solid Films,518(12),3289-3292.
MLA	Zhao T. T.,et al."Growth ambient dependent electrical properties of lithium and nitrogen dual-doped ZnO films prepared by radio-frequency magnetron sputtering".Thin Solid Films 518.12(2010):3289-3292.

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