High responsivity ultraviolet photodetector realized via a carrier-trapping process

	High responsivity ultraviolet photodetector realized via a carrier-trapping process
其他题名	论文其他题名
	Liu J. S.; Shan C. X.; Li B. H.; Zhang Z. Z.; Yang C. L.; Shen D. Z.; Fan X. W.
	2010
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	97 期号:25
摘要	Metal-semiconductor-metal structured ultraviolet (UV) photodetector has been fabricated from zinc oxide films. The responsivity of the photodetector can reach 26 000 A/W at 8 V bias, which is the highest value ever reported for a semiconductor ultraviolet photodetector. The origin of the high responsivity has been attributed to the carrier-trapping process occurred in the metal-semiconductor interface, which has been confirmed by the asymmetric barrier height at the two sides of the metal-semiconductor interdigital electrodes. The results reported in this paper provide a way to high responsivity UV photodetectors, which thus may address a step toward future applications of UV photodetectors. (C) 2010 American Institute of Physics. [doi:10.1063/1.3527974]
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26152
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu J. S.,Shan C. X.,Li B. H.,et al. High responsivity ultraviolet photodetector realized via a carrier-trapping process[J]. Applied Physics Letters,2010,97(25).
APA	Liu J. S..,Shan C. X..,Li B. H..,Zhang Z. Z..,Yang C. L..,...&Fan X. W..(2010).High responsivity ultraviolet photodetector realized via a carrier-trapping process.Applied Physics Letters,97(25).
MLA	Liu J. S.,et al."High responsivity ultraviolet photodetector realized via a carrier-trapping process".Applied Physics Letters 97.25(2010).

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